5962-9559510HYX
AUSTIN SEMICONDUCTOR INC
- Lifecycle statusTransferred
- DescriptionCache SRAM Module, 128KX32, 17ns, CMOS
- Category
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- Memory Width32
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountYES
- Terminal FormFLAT
- Memory IC TypeCACHE SRAM MODULE
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeMILITARY
- Terminal PositionQUAD
- Additional FeatureCONFIGURABLE AS 512K X 8
- Memory Organization128KX32
- Number of Functions1
- Access Time-Max (ns)17
- Number of Words Code128K
- Memory Density (bits)4194304
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Alternate Memory Width16
- Supply Voltage-Max (V)5.5
- Supply Voltage-Min (V)4.5
- Supply Voltage-Nom (V)5
- Number of Words (words)131072
- Operating Temperature-Max (Cel)125
- Operating Temperature-Min (Cel)-55
- Screening Level / Reference StandardMIL-STD-883
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5962-9559510HYX