5962-9062201MNX by AUSTIN SEMICONDUCTOR INC | Sourcengine

AUSTIN SEMICONDUCTOR INC 5962-9062201MNX

Lifecycle status
Transferred
Description
Fast Page DRAM, 4MX1, 120ns, CMOS, PZIP20
Category
Semiconductors Memory ICs DRAMs FAST PAGE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
2.85
Access Mode
FAST PAGE
Length (mm)
26.67
JESD-30 Code
R-PZIP-T20
Memory Width
1
Package Code
ZIP
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory IC Type
FAST PAGE DRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
ZIG-ZAG
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Memory Organization
4MX1
Number of Functions
1
Number of Terminals
20
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
120
Number of Words Code
4M
Memory Density (bits)
4194304
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
11.42
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
4194304
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
MIL-STD-883