5962-0150401HXX
ANAREN,INC
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 12A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XSFP-F4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureHIGH RELIABILITY, ALSO AVAILABLE IN 10 PINS
- Number of Elements1
- Number of Terminals4
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)12
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)500
- Pulsed Drain Current-Max (IDM) (A)30
- Screening Level / Reference StandardMIL-38534
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