5962-0150302HXC
MS KENNEDY CORP
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 0.00025A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountNO
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)0.00025
- Operating Temperature-Max (Cel)125
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5962-0150302HXC