5082-2817
ASI Semiconductor, Inc.
- Lifecycle statusActive
- DescriptionMixer Diode, Medium Barrier, Very High Frequency to Ultra High Frequency, 400ohm Z(V) Max, 6dB Noise Figure, Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.60
- SB Code8541.10.00.60
- Diode TypeMIXER DIODE
- TechnologySCHOTTKY
- JESD-30 CodeO-LALF-W2
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleLONG FORM Meter
- Surface MountNO
- Terminal FormWIRE
- Frequency BandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionAXIAL
- Number of Elements1
- Impedance-Max (ohm)400
- Impedance-Min (ohm)250
- Number of Terminals2
- Noise Figure-Max (dB)6
- Package Body MaterialGLASS
- Diode Element MaterialSILICON
- Type of Schottky BarrierMEDIUM BARRIER
- Power Dissipation-Max (W)0.25
- Diode Capacitance-Max (pF)1
- Operating Frequency-Max (GHz)2
- Operating Temperature-Max (Cel)200
- Operating Temperature-Min (Cel)-60
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5082-2817