5082-2751
ASI Semiconductor, Inc.
- Lifecycle statusActive
- DescriptionMixer Diode, Very High Frequency to Ultra High Frequency, 1600ohm Z(V) Max, Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.60
- SB Code8541.10.00.60
- Diode TypeMIXER DIODE
- TechnologySCHOTTKY
- JESD-30 CodeO-XEMW-N2
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleMICROWAVE Meter
- Surface MountYES
- Terminal FormNO LEAD
- Frequency BandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
- DLA QualificationNot Qualified
- Terminal PositionEND
- Number of Elements1
- Impedance-Max (ohm)1600
- Impedance-Min (ohm)1200
- Number of Terminals2
- Package Body MaterialUNSPECIFIED
- Diode Element MaterialSILICON
- Power Dissipation-Max (W)0.1
- Diode Capacitance-Max (pF)1
- Operating Frequency-Max (GHz)15
- Operating Frequency-Min (GHz)1
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-60
- Tangential Signal Sensitivity-Min (dBm)55
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5082-2751