4N65L-E-T2Q-T by UTC, Ltd. | Sourcengine

UTC, Ltd. 4N65L-E-T2Q-T

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 4A I(D), 650V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
106
Drain Current-Max (ID) (A)
4
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
180
DS Breakdown Voltage-Min (V)
650
Feedback Cap-Max (Crss) (pF)
18
Turn-off Time-Max (toff) (ns)
285
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
200
Pulsed Drain Current-Max (IDM) (A)
16
Drain-source On Resistance-Max (ohm)
2.5