4AK19
Hitachi, Ltd.
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 5A I(D), 120V, 0.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T10
- Configuration2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements4
- Number of Terminals10
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)3.5
- Drain Current-Max (ID) (A)5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)120
- Operating Temperature-Max (Cel)150
- Pulsed Drain Current-Max (IDM) (A)10
- Drain-source On Resistance-Max (ohm)0.6
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4AK19