3SK74
NEC Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-PRDB-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDUAL GATE, DEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)20
- Drain Current-Max (ID) (A)0.025
- Transistor Element MaterialSILICON
- Feedback Cap-Max (Crss) (pF)0.05
- Operating Temperature-Max (Cel)125
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3SK74