3SK205
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.75
- SB Code8541.21.00.80
- JESD-30 CodeO-PRDB-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)16 dB
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)80 A
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- Feedback Cap-Max (Crss)0.035 pF
- DS Breakdown Voltage-Min10 V
- Operating Temperature-Max125 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Power Dissipation Ambient-Max0.2 W
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3SK205
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3SK205