3N211-PBF
DIGITRON SEMICONDUCTORS
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-MBCY-W4
- ConfigurationSINGLE
- JEDEC-95 CodeTO-72
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE AND SUBSTRATE
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals4
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)24
- Drain Current-Max (ID) (A)0.05
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)27
- Feedback Cap-Max (Crss) (pF)0.05
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-65
- Power Dissipation Ambient-Max (W)0.36
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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3N211-PBF