3942GN-120V
Microsemi Corporation
- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-CDFM-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals2
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandC BAND
- Transistor Element MaterialGALLIUM NITRIDE
- DS Breakdown Voltage-Min (V)125
- Operating Temperature-Max (Cel)250
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3942GN-120V
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3942GN-120V