2SK757
Panasonic Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 10A I(D), 200V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)10 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min200 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)2 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.33 ohm
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2SK757
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2SK757