2SK613-3
Sony Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.05 A
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min15 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)0.15 W
- Transistor Element MaterialSILICON
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2SK613-3
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2SK613-3