2SK606P
Panasonic Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-PBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-92
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals3
- Power Gain-Min (Gp)15 dB
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.02 A
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- Feedback Cap-Max (Crss)0.3 pF
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)0.4 W
- Transistor Element MaterialSILICON
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2SK606P
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2SK606P