2SK439
Hitachi, Ltd.
- Lifecycle statusTransferred
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Power Dissipation-Max (W)0.3
- Drain Current-Max (ID) (A)0.03
- Transistor Element MaterialSILICON
- Operating Temperature-Max (Cel)150
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2SK439
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2SK439