2SK4065
SANYO Semiconductor Co., Ltd.
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 100A I(D), 75V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Additional FeatureULTRA-LOW RESISTANCE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)100 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min75 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)735 mJ
- Drain-source On Resistance-Max0.008 ohm
- Pulsed Drain Current-Max (IDM)400 A
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2SK4065