2SK3872-01SJ by Fuji Electric Co., Ltd. | Sourcengine

Fuji Electric Co., Ltd. 2SK3872-01SJ

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 40A I(D), 230V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
40 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
230 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
633.1 mJ
Drain-source On Resistance-Max
0.076 ohm
Pulsed Drain Current-Max (IDM)
160 A