2SK3740-ZK-E1-AZ/JM by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. 2SK3740-ZK-E1-AZ/JM

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 20A I(D), 250V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
20 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
170 pF
DS Breakdown Voltage-Min
250 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
100 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
40 mJ
Power Dissipation Ambient-Max
1.5 W
Drain-source On Resistance-Max
0.16 ohm
Pulsed Drain Current-Max (IDM)
60 A