2SK359-E
Renesas Technology Corp.
- Lifecycle statusContact Mfr
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-92
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-PBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-92
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.03 A
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- Transistor Element MaterialSILICON
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2SK359-E
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2SK359-E