2SK3355-S by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. 2SK3355-S

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 83A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
83 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
100 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
562 mJ
Drain-source On Resistance-Max
0.0088 ohm
Pulsed Drain Current-Max (IDM)
332 A