2SK2595AXTB-E
Renesas Technology Corp.
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionN-CHANNEL POWER MOSFET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee6
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishTin/Bismuth (Sn/Bi)
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Dissipation-Max (W)20
- Drain Current-Max (ID) (A)1.1
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)17
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Time@Peak Reflow Temperature-Max (s)20
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2SK2595AXTB-E