- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)10 A
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)70 ns
- DS Breakdown Voltage-Min60 V
- Turn-off Time-Max (toff)230 ns
- Operating Temperature-Max150 Cel
- Moisture Sensitivity Level2
- Power Dissipation-Max (Abs)30 W
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)240
- Power Dissipation Ambient-Max30 W
- Drain-source On Resistance-Max0.1 ohm
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