2SK2215-01S
Fuji Electric Co., Ltd.
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Additional FeatureHIGH VOLTAGE
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)8 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min600 V
- Power Dissipation-Max (Abs)80 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max1.2 ohm
- Pulsed Drain Current-Max (IDM)32 A
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2SK2215-01S