2SK2113YY by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. 2SK2113YY

Lifecycle status
Contact Mfr
REACH
REACH compliant
Description
RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Channel
Category
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Drain Current-Max (ID) (A)
0.06
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
3.5