2SK1683 by SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. | Sourcengine

SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. 2SK1683

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 3A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
3 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
90 ns
DS Breakdown Voltage-Min
900 V
Turn-off Time-Max (toff)
220 ns
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
2
Power Dissipation-Max (Abs)
50 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
240
Power Dissipation Ambient-Max
50 W
Drain-source On Resistance-Max
5 ohm
Pulsed Drain Current-Max (IDM)
6 A