2SK168-D by Hitachi, Ltd. | Sourcengine

Hitachi, Ltd. 2SK168-D

Lifecycle status
Transferred
Description
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92
Category
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-PBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-92
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Power Dissipation-Max (W)
0.2
Drain Current-Max (ID) (A)
0.02
Transistor Element Material
SILICON
Operating Temperature-Max (Cel)
125