2SK1582-T2B-A
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionPower MOSFETs for Automotive
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee6
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN BISMUTH
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.2 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)0.2 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max5 ohm
- Width2.9
- Length1.5
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2SK1582-T2B-A