2SK1215IGETL-E
Renesas Technology Corp.
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionRF N-CHANNEL MOSFET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee6
- Operating ModeDEPLETION MODE
- Terminal FinishTIN BISMUTH
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)24
- Drain Current-Max (ID) (A)0.03
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
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2SK1215IGETL-E