2SK1161-E
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionSilicon N Channel MOSFET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee2
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN COPPER
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)10 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min450 V
- Operating Temperature-Max150 Cel
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)100 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.8 ohm
- Pulsed Drain Current-Max (IDM)30 A
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2SK1161-E