2SJ664 by SANYO Semiconductor Co., Ltd. | Sourcengine

SANYO Semiconductor Co., Ltd. 2SJ664

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 17A I(D), 100V, 0.193ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
17 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
100 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
38 mJ
Drain-source On Resistance-Max
0.193 ohm
Pulsed Drain Current-Max (IDM)
68 A