2SJ551(L)
Hitachi, Ltd.
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 18A I(D), 0.11ohm, 1-Element, P-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)60
- Drain Current-Max (ID) (A)18
- Operating Temperature-Max (Cel)150
- Drain-source On Resistance-Max (ohm)0.11
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2SJ551(L)