2SJ546
Hitachi, Ltd.
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 15A I(D), 0.155ohm, 1-Element, P-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)30
- Drain Current-Max (ID) (A)15
- Operating Temperature-Max (Cel)150
- Drain-source On Resistance-Max (ohm)0.155
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2SJ546