2SH30 by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. 2SH30

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Position
SINGLE
Fall Time-Max (tf)
600 ns
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
710 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
950 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
50 A
Power Dissipation-Max (Abs)
100 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V