2SH14 by Hitachi, Ltd. | Sourcengine

Hitachi, Ltd. 2SH14

Lifecycle status
Transferred
Description
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Fall Time-Max (ns)
600
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
100
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
30
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
600