- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-220AB
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Number of Elements1
- Emitter Current-Max50 mA
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-off Time-Nom (toff)900 ns
- Static Inter-base Res-Min4.5 kohm
- Collector Current-Max (IC)10 A
- Power Dissipation-Max (Abs)0.45 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
- Intrinsic Stand-off Ratio-Max0.75
- Intrinsic Stand-off Ratio-Min0.58
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2SH11