2SD669AG-C-AE3-6-R
UTC, Ltd.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Bipolar Transistor
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-236
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- VCEsat-Max (V)0.5
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)100
- Power Dissipation-Max (W)1.14
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)1.5
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)160
- Power Dissipation Ambient-Max (W)0.35
- Collector-base Capacitance-Max (pF)14
- Transition Frequency-Nom (fT) (MHz)140
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2SD669AG-C-AE3-6-R