2SC5759 by Renesas Technology Corp. | Sourcengine

Renesas Technology Corp. 2SC5759

Lifecycle status
Transferred
Description
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Category
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.08
Collector-emitter Voltage-Max (V)
6
Collector-base Capacitance-Max (pF)
2.2
Transition Frequency-Nom (fT) (MHz)
10600