2SC5554 by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. 2SC5554

Lifecycle status
NRFND
REACH
REACH compliant
Description
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Category
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.02 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
9 V
Transition Frequency-Nom (fT)
7000 MHz
Collector-base Capacitance-Max
0.9 pF