2SC4910
SANYO Electric Co.,Ltd.
- Lifecycle statusTransferred
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureBUILT-IN BALLAST RESISTOR
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)20
- Power Dissipation-Max (W)1.5
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.75
- Collector-emitter Voltage-Max (V)18
- Power Dissipation Ambient-Max (W)1.5
- Collector-base Capacitance-Max (pF)10
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2SC4910