2SC1965
Mitsubishi Electric Corp.
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeO-MBFM-P3
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- Case ConnectionEMITTER
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Power Gain-Min (Gp)10 dB
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)10
- Operating Temperature-Max175 Cel
- Collector Current-Max (IC)1 A
- Power Dissipation-Max (Abs)1.5 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max17 V
- Power Dissipation Ambient-Max15 W
0 suppliers available to buy or to bid for 2SC1965
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
2SC1965
Send an RFQ
2SC1965