2SB1110
Renesas Technology Corp.
- Lifecycle statusTransferred
- DescriptionPower Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)60
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.1
- Collector-emitter Voltage-Max (V)200
- Transition Frequency-Nom (fT) (MHz)140
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2SB1110