2SB1079
Renesas Technology Corp.
- Lifecycle statusActive
- DescriptionPOWER BIPOLAR TRANSISTOR, PNP
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PSFM-T3
- ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- J-STD-609 Codee0
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)1000
- Power Dissipation-Max (W)100
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)20
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)100
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2SB1079