2N7002LT3
Motorola,Inc.
- Lifecycle statusTransferred
- DescriptionSmall Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-236AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)0.115
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)5
- Operating Temperature-Max (Cel)150
- Power Dissipation Ambient-Max (W)0.2
- Drain-source On Resistance-Max (ohm)7.5
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2N7002LT3