2N6849
TEMIC SEMICONDUCTORS
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-205AF
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID) (A)6.5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Drain-source On Resistance-Max (ohm)0.3
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2N6849