2N6661 by NEW ENGLAND SEMICONDUCTOR | Sourcengine

NEW ENGLAND SEMICONDUCTOR 2N6661

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 2A I(D), 90V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-39
JESD-609 Code
e0
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
2 A
DS Breakdown Voltage-Min
90 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
6.25 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
4 ohm