2N6166
ASI Semiconductor, Inc.
- Lifecycle statusContact Mfr
- DescriptionTrans RF BJT NPN 35V 9A 117000mW 4-Pin Case .500
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-CRFM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)5
- Power Dissipation-Max (W)117
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)9
- Operating Temperature-Max (Cel)200
- Collector-emitter Voltage-Max (V)35
- Collector-base Capacitance-Max (pF)130
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2N6166