2N5927
NEW ENGLAND SEMICONDUCTOR
- Lifecycle statusTransferred
- DescriptionPower Bipolar Transistor, 100A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeO-MUPM-D3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-114
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- VCEsat-Max (V)0.75
- Case ConnectionCOLLECTOR
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)10
- Power Dissipation-Max (W)200
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)2500
- Turn-off Time-Max (toff) (ns)5500
- Collector Current-Max (IC) (A)100
- Operating Temperature-Max (Cel)200
- Collector-emitter Voltage-Max (V)120
- Power Dissipation Ambient-Max (W)200
- Transition Frequency-Nom (fT) (MHz)1
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2N5927