2N5886
NEW ENGLAND SEMICONDUCTOR
- Lifecycle statusTransferred
- DescriptionPower Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-3
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- J-STD-609 Codee0
- VCEsat-Max (V)1
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals2
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)20
- Power Dissipation-Max (W)200
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)700
- Turn-off Time-Max (toff) (ns)1800
- Collector Current-Max (IC) (A)25
- Operating Temperature-Max (Cel)200
- Collector-emitter Voltage-Max (V)80
- Power Dissipation Ambient-Max (W)200
- Transition Frequency-Nom (fT) (MHz)4
0 suppliers available to buy or to bid for 2N5886
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
2N5886
Send an RFQ
2N5886