2N5667S
Microsemi Corporation
- Lifecycle statusTransferred
- DescriptionPower Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-205AD
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- J-STD-609 Codee0
- VCEsat-Max (V)0.4
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)10
- Power Dissipation-Max (W)1.2
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)250
- Turn-off Time-Max (toff) (ns)2000
- Collector Current-Max (IC) (A)5
- Operating Temperature-Max (Cel)200
- Operating Temperature-Min (Cel)-65
- Collector-emitter Voltage-Max (V)300
- Power Dissipation Ambient-Max (W)1.2
- Collector-base Capacitance-Max (pF)120
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2N5667S